640 X 480 Pace HgCdTe FPA

Details 640 X 480 Pace HgCdTe FPA 640 X 480 Pace HgCdTe FPA

Dec 1992

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992spie.1735..163k&link_type=abstract

Proc. SPIE Vol. 1735, p. 163-174, Infrared Detectors: State of the Art, Wagih H. Makky; Ed.

Computer Science

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Scientific paper

A hybrid HgCdTe 640 X 480 infrared (IR) focal plane array (FPA) that meets the sensitivity, resolution, and field-of-view requirements of high-performance medium wavelength infrared (MWIR) imaging systems has been developed. The key technology making this large, high sensitivity device producible is the epitaxial growth of HgCdTe on a CdTe-buffered, sapphire substrate (referred to as PACE, for Producible Alternative to CdTe for Epitaxy; PACE-I refers to sapphire). The device offers TV resolution with excellent sensitivity at temperatures below 120 K. Mean NE(Delta) T as low as 13 mK has been achieved at operating temperatures < 130 K, which is about an order of magnitude better than has been achieved with PtSi 640 X 480 FPAs. In addition, the latter require cooling to

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