3D backside sample preparation for radiation testing

Details 3D backside sample preparation for radiation testing 3D backside sample preparation for radiation testing

Dec 2002

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002esasp.507...85d&link_type=abstract

Proceedings of the European Space Components Conference, ESCCON 2002, 24-27 September 2002, Toulouse, France. Compiled by R.A. H

Computer Science

Scientific paper

For radiation testing, the silicon substrate needs to be thinned close
to the circuitry with a uniform thickness (less than 30 microns). Large
circuits are bent in their package (20-30 μm). New approachesare
necessary.

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