256×256 GaN ultraviolet imaging array

Details 256×256 GaN ultraviolet imaging array 256×256 GaN ultraviolet imaging array

Jan 1998

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998aipc..420...39h&link_type=abstract

Space technology and applications international forum - 1998. AIP Conference Proceedings, Volume 420, pp. 39-43 (1998).

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Photoconduction And Photovoltaic Effects, Metal-Semiconductor-Metal Structures, Iii-V Semiconductors, Iii-V Semiconductors

Scientific paper

We have successfully developed a 256×256 photoconductive GaN area imaging array using a metal-semiconductor-metal structure. The array, with its pixels (30 μm2) indium bump bonded to a readout integrated circuit, showed a 90% of yield. The spectral response of the array is consistent with the measured spectral response of the single photoconductors fabricated elsewhere on the source wafer.

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