Computer Science – Performance
Scientific paper
Oct 2005
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005spie.5986..250w&link_type=abstract
Unmanned/Unattended Sensors and Sensor Networks II. Edited by Carapezza, Edward M. Proceedings of the SPIE, Volume 5986, pp.
Computer Science
Performance
Scientific paper
We report on the design, fabrication and characterization of 1550 nm electroabsorption modulators based on InGaAs/InAlAs coupled quantum wells grown on InP substrate by MBE. Large and small single modulators and modulator arrays have been fabricated on a wafer scale with an optimized device fabrication technology. The modulator size, shape, contact arrangements, and the array configurations have been varied to achieve suitable device performance for different retro-reflective free-space optical communication links. The device electrical and optical properties have been characterized by I-V, photoluminescence, absorption, transmittance and reflectance measurements. Modulators exhibit contrast ratios of 2:1 at a 3V driving bias and contrast ratios of 2:1 over a 30 nm bandwidth at 6V. A maximum contrast ratio of 4:1 is obtained at a 12 V driving voltage.
Agren Daniel
Almqvist Susanne
Andersson Jan Y.
Junique Stephane
Noharet Bertrand
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