110-120-GHz monolithic low-noise amplifiers

Details 110-120-GHz monolithic low-noise amplifiers 110-120-GHz monolithic low-noise amplifiers

Oct 1993

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1993ijssc..28..988w&link_type=abstract

IEEE Journal of Solid-State Circuits (ISSN 0018-9200), vol. 28, no. 10, p. 988-992

Computer Science

Performance

High Electron Mobility Transistors, Hybrid Circuits, Integrated Circuits, Microwave Amplifiers, Signal To Noise Ratios, Aluminum Gallium Arsenides, Amplification, Gallium Arsenides, Indium Gallium Arsenides

Scientific paper

This paper presents the development of 110-120-GHz monolithic low-noise amplifiers (LNA's) using 0.1-micron pseudomorphic AlGaAs/InGaAs/GaAs low-noise HEMT technology. Two 2-stage LNA's have been designed, fabricated, and tested. The first amplifier demonstrates a gain of 12 dB at 112 to 115 GHz with a noise figure of 6.3 dB when biased for high gain, and a noise figure of 5.5 dB is achieved with an associated gain of 10 dB at 113 GHz when biased for low-noise figure. The other amplifier has a measured small-signal gain of 19.6 dB at 110 GHz with a noise figure of 3.9 dB. A noise figure of 3.4 dB with 15.6-dB associated gain was obtained at 113 GHz. The small-signal gain and noise figure performance for the second LNA are the best results ever achieved for a two-stage HEMT amplifier at this frequency band.

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