1/f noise in Hg1-xCdxTe detectors

Details 1/f noise in Hg1-xCdxTe detectors 1/f noise in Hg1-xCdxTe detectors

Aug 2002

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002spie.4721..227d&link_type=abstract

Proc. SPIE Vol. 4721, p. 227-233, Infrared Detectors and Focal Plane Arrays VII, Eustace L. Dereniak; Robert E. Sampson; Eds.

Computer Science

Performance

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Scientific paper

This paper investigates 1/f noise performance of Hg1-xCdxTe photovoltaic detectors when detector current is varied by changing detector area, bias, temperature and incident flux. Holding detector bias and temperature constant, measured 1/f noise current is proportional to the detector current. However for all detector areas measured, non-uniformity is observed in the noise current due to the varied quality of the detectors. Even for the (lambda) c=16micrometers , 4-micrometers -radius, diffusion-limited detectors at 78K held at reverse bias, the average and standard deviation in dark current is Id=9.76+/- 1.59x10-8A while the average and standard deviation in noise current at 1 Hz in a 1 Hz bandwidth is in=1.01+/- 0.63x10-12A. For all detector areas measured at 100 mV reverse bias, the average and standard deviation in dark current to noise current ratio is (alpha) D=in/Id=1.39+/- 1.09x10-5. Defects are presumed resident in the detectors that produce greater non- uniformity in the 1/f noise as compared to the dark current at 100 mV reverse bias. Noise was also measured as a function of temperature for two (lambda) c=16 micrometers detectors from 55 K to 100 K. The average and standard deviation in the noise current to dark current ratio is (alpha) D=in/Id=2.36+/- 0.83x10-5 for the 26-micrometers -diameter detector and (alpha) D=1.71+/- 0.69x10-5 for the 16-micrometers -diameter detector. Dark and noise current were measured while changing the bias applied to a detector. In the diffusion-limited portion of the detector I-V curve, 1/f noise is independent of bias with (alpha) D=in/Id=1.51+/- 0.12x10-5. When tunneling currents dominated, (alpha) T=in/Id=5.21+/- 0.83x10-5. The 1/f noise associated with tunneling currents is a factor of three greater than the 1/f noise associated with diffusion currents. In addition, 1/f noise was measured on detectors held at -100 mV and 78 K under dark and illuminated conditions. The average noise to current ratio (alpha) D was approximately 1.5 x 10-5 for dark and photon-induced diffusion current. However, detector-to-detector variations exist even within a single chip. The two most important points are that non-uniformities in material/fabrication need to be addressed and that each individual type of current component has an associated 1/f noise current component, the magnitude of the relationship being different depending on the source current.

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