Other
Scientific paper
Feb 2002
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002aipc..605...91m&link_type=abstract
LOW TEMPERATURE DETECTORS: Ninth International Workshop on Low Temperature Detectors. AIP Conference Proceedings, Volume 605, p
Other
4
Semiconductor-Device Characterization, Design, And Modeling, Noise Processes And Phenomena
Scientific paper
We have characterized the 1/f noise in standard ion-implanted silicon thermistors, which are about 250 nm thick. We find that it is associated with the bulk of the implant, and is interpretable as a ΔR/R fluctuation that is independent of the bias and depends only on the doping density and resistivity, or electron temperature. This excess noise is large enough that it has a significant effect on the energy resolution or NEP of a detector using these thermistors. The very steep temperature dependence of the 1/f noise suggested that it might be related to the conduction becoming two-dimensional, and we have fabricated thicker detectors to test this hypothesis. Similar doped silicon thermistors that are 1500 nm thick show negligible 1/f noise, but otherwise behave identically to the thinner thermistors of the same volume. This simple change could provide a 40% improvement in resolution for some existing X-ray detectors. .
Boyce Kevin R.
Brekosky R.
Galeazzi Massimiliano
Gygax John D.
Kelley Randall
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