Silicon monosulphide radiative association

Details Silicon monosulphide radiative association Silicon monosulphide radiative association

Sep 2007

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007mnras.380..365a&link_type=abstract

Monthly Notices of the Royal Astronomical Society, Volume 380, Issue 1, pp. 365-368.

Astronomy and Astrophysics

Astronomy

3

Atomic Data, Atomic Processes, Circumstellar Matter, Ism: Molecules

Scientific paper

Rate coefficients for radiative association of silicon and sulphur atoms to form silicon monosulphide (SiS) molecule are estimated. The radiative association is due mainly to approach in the E1Σ+ and A1Π states of SiS. For temperatures ranging from ~1000 to ~14000 K, the rate coefficients are found to vary from 8.43 × 10-17 to 2.69 × 10-16 cm3 s-1. Our calculated rate coefficient is higher than the values used in modelling the chemistry of Type Ia supernovae.

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