Low background microwave-biased extrinsic photoconductors

Details Low background microwave-biased extrinsic photoconductors Low background microwave-biased extrinsic photoconductors

Jul 1976

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1976phdt........46c&link_type=abstract

Ph.D. Thesis Southern Methodist Univ., Dallas, TX.

Computer Science

Performance

1

Microwaves, Photoconductors, Background Radiation, Doped Crystals, Filters, Germanium, Infrared Detectors, Mercury (Metal), Models

Scientific paper

A theoretical and experimental description of low background microwave-biased extrinsic photoconductors is presented. A low frequency equivalent circuit model of such devices was developed. The model was postulated to be valid for microwave-biased extrinsic photoconductors operating at any background photon irradiance level. A low background microwave-biased mercury-doped germanium photoconductor experiment is described. The experimental results were seen to confirm the validity of the equivalent circuit model. Microwave-biased extrinsic photoconductors were shown to exhibit no sweepout effects. Data also indicated that microwave-biased extrinsic photoconductors are not constrained to performance values derived from sweepout-limited photoconductor theory. Consequently, microwave-biased extrinsic photoconductors were shown to be fast, high-gain IR detectors.

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