High precision photometry - The electron bombarded diode approach

Details High precision photometry - The electron bombarded diode approach High precision photometry - The electron bombarded diode approach

Sep 1988

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1988a%26a...203..203c&link_type=abstract

Astronomy and Astrophysics (ISSN 0004-6361), vol. 203, no. 1, Sept. 1988, p. 203-206.

Astronomy and Astrophysics

Astrophysics

2

Electron Bombardment, Photometry, Photon-Electron Interaction, Semiconductor Diodes, Linear Arrays, Photocathodes, Power Spectra, Silicon, Thermionic Emission

Scientific paper

Accurate photometric laboratory tests with a Digicon type photometer working in a photon counting mode are discussed. The operational principle involves the direct electron bombardment of a silicon diode by photoelectrons released from a photocathode. The amplification is clean, and the pulse height distribution shows a well-defined single photoelectron peak, in constrast to photomultipliers. By analyzing this distribution, the counting rate stability can be predicted as a function of fluctuations of electrical parameters such as high voltage, amplifier gain, and discriminator voltage. The predictions are in agreement with experimental results from photon-noise-limited photometry and simulations of stellar seismology photometric variations.

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