Silicon lines as spectral diagnostics - The effect of charge transfer

Details Silicon lines as spectral diagnostics - The effect of charge transfer Silicon lines as spectral diagnostics - The effect of charge transfer

Jan 1980

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1980apj...235l..45b&link_type=abstract

Astrophysical Journal, Part 2 - Letters to the Editor, vol. 235, Jan. 1, 1980, p. L45-L48.

Astronomy and Astrophysics

Astronomy

85

Charge Transfer, Cosmic Plasma, Line Spectra, Plasma Diagnostics, Plasma Spectra, Silicon, Stellar Atmospheres, Chromosphere, Earth Ionosphere, Helium Ions, Ionization, Solar Atmosphere, Ultraviolet Astronomy

Scientific paper

The paper discusses the importance of charge transfer as an ionization source in astrophysical plasmas. The effect of the rapid charge transfer reactions Si(+) + H(+) yields Si(+2) + H - 2.74 eV and SI(2+) + He(+) yields Si(+3) + He - 8.88 eV on the ionization equilibrium of silicon is calculated. The dominant ionization stage of silicon in a coronal plasma is shown to be Si(+2) for temperatures as low as 20,000 K in contrast to the temperature of 35,000 K determined from earlier ionization equilibrium calculations. The Si(+3) abundance is also substantially modified. For the quiet-sun transition region, the effect of charge transfer upon the emissivity of the Si III lambda 1892 emission line is calculated. The peak emissivity occurs at a temperature a factor of 2 lower and is an order of magnitude higher than implied by calculations neglecting the silicon charge-transfer process. The results have widespread importance for the interpretation of solar, stellar, interstellar, and extragalactic silicon lines.

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