Effects of proton damage on charge-coupled devices

Details Effects of proton damage on charge-coupled devices Effects of proton damage on charge-coupled devices

Jul 1991

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1991spie.1447...87j&link_type=abstract

Proc. SPIE Vol. 1447, p. 87-108, Charge-Coupled Devices and Solid State Optical Sensors II, Morley M. Blouke; Ed.

Computer Science

Performance

14

Scientific paper

Recent analytical and experimental work has provided new insights into the production of damage sites in silicon Charge-Coupled Devices (CCDs) by energetic particles and into the effects of these sites on CCD performance. An approximate correlation is presented between experimental results and a prediction of proton-induced displacement damage, and possible explanations for remaining inconsistencies are discussed. As a consequence of this agreement, it is now possible to predict the effect of complicated space proton environments upon CCD charge transfer efficiency and other CCD performance parameters. This prediction requires evaluation of the damage resulting from only a small number (<6) of quasi-mono- energetic proton exposures to calibrate the susceptibility of a given device. Finally, prospects for extending this technique to other types of radiation are discussed.

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