Single Event Upsets of Spacecraft Microelectronics Exposed to Solar Cosmic Rays

Details Single Event Upsets of Spacecraft Microelectronics Exposed to Solar Cosmic Rays Single Event Upsets of Spacecraft Microelectronics Exposed to Solar Cosmic Rays

Dec 1996

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1996esasp.392..103k&link_type=abstract

Environment Modelling for Space-based Applications, Symposium Proceedings (ESA SP-392). ESTEC Noordwijk, 18-20 September 1996. E

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The technique of quantitative estimation of SEU rate due to SCR particle influence on microelectronics on board spacecraft is presented with account for the contribution of primary (caused by ions) and secondary (caused by protons) mechanisms of SEU occurrence. The technique is based on new calculated models of energy spectra of SCR particles and circuit SEU rate developed and implemented in the form of computer software at INP MSU. The SCR model is based on the results of statistical-functional analysis of experimental data of particle (proton and heavy ion) energy spectra of SCR events in the wide energy range. The energy spectra of all SCR particles in the energy range 30meV/nucleon are approximated by power-law functions of the momentum (per nucleon) with the power index (spectral index) for the ion spectrum on average larger by a factor of 1.26(0.07), than the spectral index for protons in the same event. The model permits to calculate spectra of LET of ions and SCR, which along with the energy spectra of SCR protons are used for estimates of SEU rate. The model for calculating the SEU rate, accounts both the direct influence of cosmic ray ions (primary mechanism) and the influence of nuclear reaction products, produced during bombardment by cosmic ray protons (secondary mechanism). Here, the same initial parameters of the microcircuit are used for calculating both the primary and secondary effects, and the parameters themselves are determined, according to the results of testing the microcircuit on heavy ion accelerators. The developed models, united into one technique, were used for analysing the experimental data for the Fairchild 93L422 IC, obtained on the TDRS-1 satellite, under the impact of proton fluxes during the SCR event of September-October 1989. The analysis accounted for the distribution of shielding matter around the microcircuit, since in the preliminary calculations are sharp dependence of the ratio of the contributions of primary and secondary mechanisms of SEU occurrence on the shielding thickness was found. The suggested technique for estimating the SEU rate, permitted to obtain a good agreement of the calculated and experimental values with account for the realistic distribution of the shielding thicknesses around the microcircuit. It was revealed, that for the effective shielding thickness of SCR protons and ions give a comparable contribution to the SEU rate.

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