Computer Science
Scientific paper
Nov 1998
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998phdt.........4r&link_type=abstract
Thesis (PHD). HARVARD UNIVERSITY , Source DAI-B 59/05, p. 2254, Nov 1998, 215 pages.
Computer Science
2
Silicon Ion Beam
Scientific paper
An experiment to measure electron-impact excitation (EIE) of multiply-charged ions is described. An absolute measurement has been carried out of the cross section for EIE of Si2+(3s2/ 1S/to3s3p/ 1P) from energies below threshold to 11 eV above. A beams modulation technique with inclined electron and ion beams was used. Radiation at 120.7 nm from the excited ions was detected using an absolutely calibrated optical system. The analysis of the experimental data requires a determination of the population fraction of the Si2+ (3s3p/ 3Po) metastable state in the incident ion beam, which was measured to be 0.210 ± 0.018. The data have been corrected for contributions to the signal from radiative decay following excitation from the metastable state to 3s3p1P and 3p2/ 3P, and excitation of the ground state to levels above 3s3p/ 1P. The experimental 0.56 ± 0.08 eV energy spread has allowed us to resolve complex resonance structure throughout the studied energy range. At the reported ±14% uncertainty level (90% confidence limit), the measured structure and absolute scale of the cross section are in good agreement with 12-state close-coupling R-matrix calculations.
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