Computer Science – Performance
Scientific paper
Jun 1975
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1975itmtt..23..461l&link_type=abstract
IEEE Transactions on Microwave Theory and Techniques, vol. MTT-23, June 1975, p. 461-469.
Computer Science
Performance
3
Field Effect Transistors, Gallium Arsenides, Gates (Circuits), Microwave Amplifiers, Modulators, Transistor Amplifiers, Amplitude Modulation, Low Noise, Power Gain, Pulse Modulation, Schottky Diodes
Scientific paper
This paper describes the microwave performance of GaAs FET's with two 1-micron Schottky-barrier gates (dual-gate MESFET's). At 10 GHz the MESFET, with an inductive second-gate termination, exhibits an 18-dB gain with -26-dB reverse isolation. Variation of the second-gate potential yields a 44-dB gain-modulation range. The minimum noise figure is 4.0 dB with 12-dB associated gain at 10 GHz. Pulse modulation of an RF carrier with a 65-ps fall and a 100-ps rise time is demonstrated. The dual-gate MESFET with high gain and low noise figure is especially suited for receiver amplifiers with automatic gain control (AGC) as an option. The MESFET is equally attractive for subnanosecond pulsed-amplitude modulation (PAM), phase-shift-keyed (PSK), and frequency-shift-keyed (FSK) carrier modulation.
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