Effects of Grain Morphology and Impurities on the Infrared Spectra of Silicon Carbide Particles

Details Effects of Grain Morphology and Impurities on the Infrared Spectra of Silicon Carbide Particles Effects of Grain Morphology and Impurities on the Infrared Spectra of Silicon Carbide Particles

2001-11-15

arxiv.org/abs/astro-ph/0111301v2

2000, ASP Conference Series 196, 273

Astronomy and Astrophysics

Astrophysics

8 pages, 5 figures, in N.L. Sitko, A.L. Sprague, D.K. Lynch (eds.) Thermal Emission Spectroscopy and Analysis of Dust, Disks a

Scientific paper

In this paper we demonstrate that distinguishing between the polytypes of silicon carbide by means of infrared features in small-grain spectra is impossible. Therefore, the infrared spectra of carbon stars, unfortunately, do not provide a means for drawing comparisons between the crystal structures of grains condensed in these environments and found in meteorites. This is proven first by comparing theoretical band profiles calculated for ellipsoidal particles, which show clearly a strong dependence on the axis ratio of the ellipsoids but negligible differences for the two most common polytypes. Second, spectra measured on submicron particle samples in the laboratory do not show any obvious correlation of band position or shape to the polytype. However, we demonstrate by measurements on SiC whiskers that grain shape is able to determine the spectrum completely. A further strong systematic influence on the band profile can be exerted by plasmon-phonon coupling due to conductivity of the SiC material. The latter fact probably is responsible for the confusion in the astronomical literature about spectral properties of SiC grains. We show that, although the conductivity seems to be a common property of many SiC laboratory samples, it is, however, independent of the polytype.

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