Performance predictions of InSb switched FET hybrid arrays

Details Performance predictions of InSb switched FET hybrid arrays Performance predictions of InSb switched FET hybrid arrays

Jan 1986

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1986spie..627..438d&link_type=abstract

IN: Instrumentation in astronomy VI; Proceedings of the Meeting, Tucson, AZ, Mar. 4-8, 1986. Part 2 (A87-36376 15-35). Bellingha

Computer Science

Performance

Field Effect Transistors, Indium Antimonides, Linear Arrays, Multiplexing, Photovoltaic Cells, Switching Circuits, Infrared Spectra, Noise Spectra, Performance Tests, Pixels, Quantum Efficiency, Silicon Transistors

Scientific paper

A technique of utilizing charge integration with InSb photovoltaic arrays is described. This device uses a MOSFET-switched silicon multiplexer to sequentially connect each detector to a common line and JFET amplifier. A noise model is presented which can be used to predict performance of the detector/multiplexer system. Performance prediction curves are included that allow comparisons and decisions related to system design. This noise model can be generalized to calculate performance characteristics for any detector/multiplexer configuration.

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