High sensitivity operation of discrete solid state detectors of 4 K

Details High sensitivity operation of discrete solid state detectors of 4 K High sensitivity operation of discrete solid state detectors of 4 K

Mar 1981

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1981apopt..20..814r&link_type=abstract

Applied Optics, vol. 20, Mar. 1, 1981, p. 814-818. No. AST-78-22482;

Computer Science

Performance

16

Amplifier Design, Jfet, Noise Reduction, Preamplifiers, Radiation Detectors, Spectral Sensitivity, Electromagnetic Noise Measurement, Indium Antimonides, Infrared Spectra, Network Synthesis, Optimization, Performance Prediction, Solid State Devices, Transistor Amplifiers

Scientific paper

Techniques are described to allow operation of discrete solid state detectors at 4 K with optimized junction field effect transistor (JFET) amplifiers. Three detector types cover the 0.6-4 micron spectral range with a noise equivalent power (NEP) of approximately 10 to the -16th per sq rt Hz for two of the types and potential improvement to this performance for the third. Lower NEPs can be anticipated at longer IR wavelengths.

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