High-efficiency GaAs M.E.S.F.E.T. amplifiers

Details High-efficiency GaAs M.E.S.F.E.T. amplifiers High-efficiency GaAs M.E.S.F.E.T. amplifiers

Oct 1975

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1975ell....11..508h&link_type=abstract

Electronics Letters, vol. 11, Oct. 16, 1975, p. 508, 509.

Computer Science

Performance

Field Effect Transistors, Gallium Arsenides, Microwave Amplifiers, Power Efficiency, Transistor Amplifiers, Intermodulation, Metal Surfaces, Performance Tests, Power Amplifiers, Schottky Diodes, Traveling Wave Amplifiers

Scientific paper

Results obtained in class-AB and class-B operation of GaAs Schottky-barrier field-effect transistors (M.E.S.F.E.T.s) are reported. Under class-B conditions power added efficiencies as high as 61% at 4 GHz and 41% at 8 GHz were obtained. Power added efficiencies of 49%, 40%, and 35% were demonstrated at third order intermodulation levels of -20, -25, and -30 dB, respectively, for 4 GHz 2-carrier operation under class-B conditions. Test data show that GaAs M.E.S.F.E.T. amplifiers are well suited for multicarrier systems requiring high efficiency with low intermodulation distortion, and are potentially applicable as T.W.T.A. drivers and medium-power T.W.T.A. replacements in communications satellites.

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