Non-LTE calculations of silicon-line strengths in B-type stars

Details Non-LTE calculations of silicon-line strengths in B-type stars Non-LTE calculations of silicon-line strengths in B-type stars

Oct 1986

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1986mnras.222..719l&link_type=abstract

Monthly Notices of the Royal Astronomical Society (ISSN 0035-8711), vol. 222, Oct. 15, 1986, p. 719-729. SERC-supported research

Astronomy and Astrophysics

Astronomy

58

Abundance, B Stars, Nonequilibrium Thermodynamics, Silicon, Stellar Spectra, Line Spectra, Near Infrared Radiation, Stellar Atmospheres, Stellar Models

Scientific paper

Non-LTE line-formation calculations have been undertaken for Si II, Si III and Si IV ions using a new grid of model atmospheres. The principal difference to previous calculations is the completeness and reliability of the adopted atomic data. Equivalent widths of 58 silicon lines are presented for a range of effective temperatures (17500 - 30000K), logarithmic gravities (3.5 - 4.5), microturbulent velocities (0 and 5 km s-1) and silicon abundances (approximately 7.0 - 8.0 dex) appropriate to main-sequence early B-type stars. Also tabulated are the corresponding LTE line strengths. The importance of non-LTE effects, particularly in the near-infrared, are confirmed.

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