Reliable large-area germanium photodetectors fabricated with a diffused junction from in situ III-V epitaxial material

Details Reliable large-area germanium photodetectors fabricated with a diffused junction from in situ III-V epitaxial material Reliable large-area germanium photodetectors fabricated with a diffused junction from in situ III-V epitaxial material

Dec 2003

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2003spie.5209..125m&link_type=abstract

Materials for Infrared Detectors III. Edited by Longshore, Randolph E.; Sivananthan, Sivalingam. Proceedings of the SPIE, Volum

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Low cost germanium photodetectors for sensing applications in the 900-1600 nm spectral region have been developed. By varying the Ge substrate resistivity as well as device area, photodetector properties such as reverse leakage current, capacitance, and shunt resistance have been engineered. Low leakage current devices of various sizes up to 1 cm2 have been fabricated and have consistently exhibited exceptionally high shunt resistances and excellent linearity. Over 5000 hours of active stress testing have left the ultra-low leakage currents unchanged. These data were measured in accordance with Telcordia 468-CORE requirements at 85°C, 125°C and 175°C. The results indicate that these mesa photodetectors meet telecommunication industry requirements for reliability. These devices are comparable to commercially available Ge photodetectors, and can be readily substituted for more complex InGaAs photo-detectors in applications such as laser monitor diodes.

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