The nature of the compositional dependence of p n junction depth in ion-milled p-HgCdTe

Details The nature of the compositional dependence of p n junction depth in ion-milled p-HgCdTe The nature of the compositional dependence of p n junction depth in ion-milled p-HgCdTe

Feb 2006

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2006sesct..21..116b&link_type=abstract

Semiconductor Science and Technology, Volume 21, Issue 2, pp. 116-123 (2006).

Computer Science

6

Scientific paper

The dependence of conductivity-type conversion depth in vacancy-doped Hg1-xCdxTe (MCT) alloys subjected to ion milling on alloy composition and treatment temperature is studied both experimentally and theoretically. It is shown that both in compositionally homogeneous crystals and in samples with a wide bandgap protective layer the dependence is defined by internal electric fields, which affect the diffusion of mercury interstitial atoms that are generated during the treatment. Results of the calculation of the effect of the potentials of a p n junction formed by ion milling and of a varyband structure field (in samples with the protective layer) on the conversion depth fit both the original experimental data and those taken from the literature well. The data obtained confirms the validity of the diffusion model of the formation of the excessive mercury source in MCT subjected to ion milling, which was proposed by the authors previously. The results presented in the paper allow one to predict and control the conversion depth in MCT subjected to ion milling for p n junction fabrication, which makes them useful in MCT infrared detector technology.

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