Design of low-noise wide-dynamic-range GaAs optical preamps

Details Design of low-noise wide-dynamic-range GaAs optical preamps Design of low-noise wide-dynamic-range GaAs optical preamps

Nov 1991

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1991spie.1541...83b&link_type=abstract

Proc. SPIE Vol. 1541, p. 83-90, Infrared Sensors: Detectors, Electronics, and Signal Processing, T. S. Jayadev; Ed.

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GaAs MESFET technology is ideal for use in lightwave receiver applications. FET devices have a fundamental advantage over BJT transistors in low noise applications because of their inherent high input impedance. Another advantage comes from the fact that FETs are majority carrier devices and can be easily used as feedback elements in automatic gain control applications.

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