The growth and characterization of HgTe epitaxial layers made by organometallic epitaxy

Details The growth and characterization of HgTe epitaxial layers made by organometallic epitaxy The growth and characterization of HgTe epitaxial layers made by organometallic epitaxy

Aug 1984

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1984jels..131.1923b&link_type=abstract

Electrochemical Society, Journal (ISSN 0013-4651), vol. 131, Aug. 1984, p. 1923-1926. Research supported by the General Electric

Computer Science

7

Epitaxy, Mercury Tellurides, Organometallic Compounds, Semiconductors (Materials), Cadmium Tellurides, Carrier Density (Solid State), Carrier Mobility, Mercury Cadmium Tellurides, Vapor Deposition

Scientific paper

Mercury telluride layers have been grown on cadmium telluride substrates, by the reaction of diethyltelluride and mercury. Typical growth rates, at 415 C, are 3.3 microns/h. Resulting films had an apparent Hall mobility of 100,000 sq cm/V-s at liquid nitrogen temperature, and an effective electron concentration of 2 x 10 to the 16th per cu cm. The growth and electrical characteristics of these films are described in this paper.

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