EUV emission line ratios for SI IV in the solar transition region

Details EUV emission line ratios for SI IV in the solar transition region EUV emission line ratios for SI IV in the solar transition region

Mar 1988

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1988jphys..49..227k&link_type=abstract

(IAU, ESA, CNRS, et al., Colloquium on UV and X-ray Spectroscopy of Astrophysical and Laboratory Plasmas, 102nd, Beaulieu-sur-Me

Astronomy and Astrophysics

Astrophysics

1

Electron Transitions, Emission Spectra, Silicon, Solar Activity, Ultraviolet Radiation, Abundance, Atomic Excitations, Electron Energy, Ionization, Solar Spectra

Scientific paper

Theoretical electron temperature-sensitive emission line ratios in Si IV involving the 3d 2D - 3p 2P and 4s 2S - 3p 2P multiplets at approximately 1125 A and 816 A, respectively, are derived using R-matrix electron excitation rate calculations. A comparison of these ratios with observational data for a solar active region obtained with the Harvard S-055 spectrometer aboard Skylab reveals good agreement between theory and observation for the ratio that includes the 2D(3/2,5/2) - 2P(3/2) transition at 1128.3 A. This is in contrast to the findings of Keenan, Dufton, et al. (1986), and provides support for the atomic data adopted in the calculations. However, the 2D(3/2) - 2P(1/2) line at 1122.5 A appears to be severely blended, as it leads to electron temperature estimates that differ significantly from that expected in ionization equilibrium. Electron temperatures deduced for a sunspot are much lower than those predicted from ionization balance calculations and imply that a cooling flow may be present.

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