Astronomy and Astrophysics – Astronomy
Scientific paper
Jul 1986
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1986infph..26..247h&link_type=abstract
Infrared Physics (ISSN 0020-0891), vol. 26, July 1986, p. 247-261.
Astronomy and Astrophysics
Astronomy
8
Beryllium, Germanium, Infrared Detectors, Photoconductors, Transient Response, Zinc, Carrier Lifetime, Flux Density, Infrared Astronomy, Space Charge, Temperature Dependence
Scientific paper
An experimental study of the transient behavior of Ge:Be and Ge:Zn photoconductors to changes in photon flux rates has been performed under the low background flux conditions (10 to the 8th photon/s) typical of astronomy and astrophysics applications. A characteristic transient behavior with time constants ranging from 0.1 to greater than 5 s has been observed in both materials when the shallow levels are very closely compensated. The detector response consists of both a fast and a slow component. The amplitude of the slow component can be up to 10 times greater than the initial fast component. It has been established that this phenomenon cannot be explained by current models of carrier sweep-out or dielectric relaxation. The transient behavior has been characterized as a function of temperature, electric field, photoconductive gain and material parameters.
Haegel Nancy M.
Haller Elmar
No associations
LandOfFree
Transient response of Ge:Be and Ge:Zn FIR photoconductors under low background photon flux conditions does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Transient response of Ge:Be and Ge:Zn FIR photoconductors under low background photon flux conditions, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transient response of Ge:Be and Ge:Zn FIR photoconductors under low background photon flux conditions will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-1655529