Excitation rate coefficients for optically allowed transitions in SI IX

Details Excitation rate coefficients for optically allowed transitions in SI IX Excitation rate coefficients for optically allowed transitions in SI IX

Jul 1986

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1986a%26a...162..333a&link_type=abstract

Astronomy and Astrophysics (ISSN 0004-6361), vol. 162, no. 1-2, July 1986, p. 333-339. SERC-supported research.

Astronomy and Astrophysics

Astrophysics

12

Astronomical Spectroscopy, Atomic Collisions, Collision Parameters, Electron Transitions, Silicon, Electron Energy, Rates (Per Time), Solar Spectra, Tables (Data), Wave Interaction

Scientific paper

Collision strengths were calculated for OA transitions among the states 1s(2)2s(2)2p(2), 1s(2)2s2p(3) and 1s(2)2p(4) configurations of Si IX by the configuration interaction wave functions using the CIV 3 code are reported. A second program, JAJOM, was employed to transform the L-S coupling scheme collision strengths into an intermediate coupling model. The results for an energy interval slightly off the resonance regions are found to be generally lower, by 30 percent, than values previously obtained by distorted wave calculations. A listing is provided of calculated transitional collisional strengths in the electron temperature range 50,000-10 million K.

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