Current state of the art in InSb infrared staring imaging devices

Details Current state of the art in InSb infrared staring imaging devices Current state of the art in InSb infrared staring imaging devices

Jan 1987

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1987spie..750...27b&link_type=abstract

IN: Infrared systems and components; Proceedings of the Meeting, Los Angeles, CA, Jan. 13-15, 1987 (A88-34509 13-35). Bellingham

Computer Science

1

Image Transducers, Indium Antimonides, Infrared Imagery, Technology Assessment, Charge Injection Devices, Mercury Cadmium Tellurides

Scientific paper

A monolithic 128 x 128 InSb array is described for staring infrared imaging systems operating in the 3-5 micron spectral region. The array is fabricated with only 4 mask levels, and has almost 5 times higher responsivity and nearly 14 times greater wafer yield, compared to a previous design. The higher responsivity has resulted in demonstration of significantly improved thermal imagery.

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