Direct implantation process development and characterization in advanced Hg(1)-(x)Cd(x) Te EPI layers

Details Direct implantation process development and characterization in advanced Hg(1)-(x)Cd(x) Te EPI layers Direct implantation process development and characterization in advanced Hg(1)-(x)Cd(x) Te EPI layers

Nov 1989

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1989stan.reptx....s&link_type=abstract

Final Report, 1 Oct. 1987 - 30 Nov. 1989 Stanford Univ., CA. Dept. of Electrical Engineering.

Other

Electron Mobility, Energy Gaps (Solid State), Infrared Detectors, Ion Implantation, Laser Annealing, Mercury Cadmium Tellurides, Semiconductor Junctions, Absorptivity, Backscattering, Nonlinear Systems, Permittivity, Photolithography, Thermal Radiation, Tunable Lasers

Scientific paper

Mercury cadmium telluride (MCT) has been extensively studied over the past thirty years, primarily as an optical detector material for the mid and far infrared. Researchers have also shown interest in other potential uses for the material such as optical communication devices, tunable lasers, and nonlinear optical devices. The properties that make the alloy semiconductor MCT particularly suited for infrared detection include an energy gap that can be adjusted from a value of -0.3 eV for the semimetal HgTe to 1.6 eV for CdTe and a direct energy gap over all values of composition. The direct energy gap gives the material a large absorption coefficient which means that the detector needs to be only several microns thick to absorb all the radiation of interest. It thus lends itself readily to production-line processing utilizing standard photolithographic techniques. Additional favorable properties include a very high electron mobility, a high electron-to-hole mobility ratio, and a fairly low dielectric constant.

Affiliated with

Also associated with

No associations

Rating

Direct implantation process development and characterization in advanced Hg(1)-(x)Cd(x) Te EPI layers does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Direct implantation process development and characterization in advanced Hg(1)-(x)Cd(x) Te EPI layers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Direct implantation process development and characterization in advanced Hg(1)-(x)Cd(x) Te EPI layers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-1619064