Small-signal, low-noise active devices

Details Small-signal, low-noise active devices Small-signal, low-noise active devices

Feb 1985

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1985mijo...28..121m&link_type=abstract

Microwave Journal (ISSN 0026-2897), vol. 28, Feb. 1985, p. 121, 122, 124 (10 ff.).

Astronomy and Astrophysics

Astronomy

Amplifier Design, Field Effect Transistors, Gallium Arsenides, Low Noise, Microwave Amplifiers, Transistor Amplifiers, Bipolar Transistors, Frequency Response, Integrated Circuits, Noise Temperature, Parametric Amplifiers, Radio Astronomy

Scientific paper

Low-noise, traveling-wave tube amplifiers (LNTWTAs) and reflective amplifiers as receiver preamplifiers for electronic defense-related applications are being rapidly replaced by transistors amplifiers. A discussion of today's low-noise microwave amplifier technology is therefore, concerned with GaAs FETs. There are, however, other technologies. Thus, the parameteric amplifier is still the uncontested choice for high-capacity ground stations and other applications requiring low-noise or smaller instantaneous bandwidth. For some applications in which the lowest-possible noise temperature is vital, such as radio astronomy and experimental radiometry, masers are often used. The field of low-noise amplifier technology is reviewed. Attention is given to silicon bipolar technology is reviewed. Attention is given to silicon bipolar technology, microwave transistor developments, the introduction of GaAs monolithic microwave integrated circuits (GaAs MMICs), low noise at mm-wavelengths, and GaAs FET for operation involving frequencies in the range from 18 to 40 GHz and higher.

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