Influence of interdiffusion on strained GaInSb/InAs material and its application on long-wavelength infrared photodectors

Computer Science

Scientific paper

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Scientific paper

Intermixing effect in type-II Ga(subscript 0.6)In(subscript 0.4)Sb/InAs superlattices is studied. The interdiffusion of both group- III and group V atoms across the heterointerface modifies the superlattices optical properties and electronic structures. The intermixed-induced strain has different effects on the band structure of the respective strained layers. Conduction band is undergone successive changes where the barrier height was initially increased in potential and subsequently became lower than the as-grown one for increasing extent of intermixing. Consequently the confinement profile is tuned from an abrupt interface to a graded shape. Intersubband transition is investigated in the intermixed superlattices where the absorption peak wavelength is red shifted continuously from the as grown 11.7 to the interdiffused 12.5 micrometers . Both the intermixed absorption and responsivity are reducing in magnitude. However, dark current is reduced at initial stage of intermixing as a result of the increase in confinement potential and the effective barrier width. Detectivity at 77 K is enhanced for the intermixed detector from 2.5 X 10(superscript 11) to 3 X 10(superscript 11) cm(root)Hz/W, which is comparable to the MCT detector.

No associations

LandOfFree

Say what you really think

Search LandOfFree.com for scientists and scientific papers. Rate them and share your experience with other people.

Rating

Influence of interdiffusion on strained GaInSb/InAs material and its application on long-wavelength infrared photodectors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Influence of interdiffusion on strained GaInSb/InAs material and its application on long-wavelength infrared photodectors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Influence of interdiffusion on strained GaInSb/InAs material and its application on long-wavelength infrared photodectors will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFWR-SCP-O-1545947

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.