Hole trapping in MOSFET by hot carrier stressing and ionizing irradiation at 77K

Details Hole trapping in MOSFET by hot carrier stressing and ionizing irradiation at 77K Hole trapping in MOSFET by hot carrier stressing and ionizing irradiation at 77K

Jun 1994

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1994spie.2226...94d&link_type=abstract

Proc. SPIE Vol. 2226, p. 94-98, Infrared Readout Electronics II, Eric R. Fossum; Ed.

Computer Science

Scientific paper

Hole trapping phenomena by substrate hot carrier (SHC) stressing and ionizing radiation are compared. Similar effects on device characteristics such as transconductance change, threshold voltage (V(subscript t)) shift etc due to SHC stressing and ionizing radiation are observed. Less radiation induced V(subscript t) shift is observed for SHC stressed device than that due to virgin device. Though the hole traps due to SHC stressing and ionizing irradiation anneal with applied field, their annealing behavior is markedly different. It is due to the fact that the hole trap distribution is different for SHC stressing condition than that due to ionizing irradiation.

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