Bias-induced long-term transient in a-Si:H thin film transistors

Details Bias-induced long-term transient in a-Si:H thin film transistors Bias-induced long-term transient in a-Si:H thin film transistors

Oct 2004

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2004spie.5578..315j&link_type=abstract

Photonics North 2004: Optical Components and Devices. Edited by Armitage, John C.; Fafard, Simon; Lessard, Roger A.; Lampropoul

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In this work, we have investigated and modeled an anomalous transient behaviour of the a-Si:H TFT in a time scale (of the order of hundreds of seconds) where threshold voltage shift is not prominent. Such a long term transient in the terminal characteristics can be critical in analog applications such as AMOLED displays. The reproducibility of the transient behaviour regardless of the presence of initial thermal annealing suggests that the behaviour is not related to creation of metastable defect in a-Si:H. We rather believe that the underlying mechanism is a configurational relaxation of existing Si dangling bond (D) defects. Based on the defect relaxation mechanism, we have proposed a time dependent drain current model to describe the long term transient response of the TFT in the forward above-threshold regime. The simulation results are in good agreement with the measurement data with a discrepancy of less than 5%.

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