Collision-strength dependence of solar emission lines of Si(X) and S(XII)

Details Collision-strength dependence of solar emission lines of Si(X) and S(XII) Collision-strength dependence of solar emission lines of Si(X) and S(XII)

Sep 1984

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1984jqsrt..32..253c&link_type=abstract

Journal of Quantitative Spectroscopy and Radiative Transfer (ISSN 0022-4073), vol. 32, Sept. 1984, p. 253-256. Research supporte

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1

Emission Spectra, Ionic Collisions, Radiative Transfer, Silicon, Solar Spectra, Sulfur, Atomic Energy Levels, Computational Astrophysics, Electron Energy, Electron Scattering, Electron Transitions, Proton Scattering

Scientific paper

The author has calculated the normalized populations of 15 levels in Si(X) and S(XII) ions in an optically thin medium, under steady-state condition, by using (1) constant collision strengths computed at the incident electron energy kTe and (2) incident electron-energy-dependent collision strengths. To calculate intensity ratios for solar emission lines, one may use constant collision strengths at the electron energy Earcmin.

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