Measurement Of Etch Rate For SiO2 Single Crystal Treated With DC-Plasma

Details Measurement Of Etch Rate For SiO2 Single Crystal Treated With DC-Plasma Measurement Of Etch Rate For SiO2 Single Crystal Treated With DC-Plasma

Jul 2010

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2010pobeo..89..293j&link_type=abstract

Publications of the Astronomical Observatory of Belgrade, vol. 89, pp. 293-296

Astronomy and Astrophysics

Astronomy

Scientific paper

In semiconductor industry low-k materials as SiO2 play important role. In this paper a SiO2 single crystal is treated by DC plasma discharge. Our work is focused on interaction between ions and dielectric surface. The etch rates, surface morphology and chemical composition of modified surface layer obtained by DC plasma etching are reported. Influence of plasma chemistry (SF6, O2, N2, Ar and He), discharge voltage (up to 2.2 kV), gas flow (up to 40 sccm, for each gas) and electrode-wafer geometry on etch rate of SiO2 wafer have been studied. Offline metrology is conducted for SiO2 wafer by SEM/EDAX technique and Raman scattering. Effects of plasma treatment conditions on integrated intensity of broad Raman peak at around 2800cm-1. An analysis of this correlation could be a framework for creating virtual etches rate sensors, which might be of importance in managing of plasma etching processes.

Affiliated with

Also associated with

No associations

Rating

Measurement Of Etch Rate For SiO2 Single Crystal Treated With DC-Plasma does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Measurement Of Etch Rate For SiO2 Single Crystal Treated With DC-Plasma, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Measurement Of Etch Rate For SiO2 Single Crystal Treated With DC-Plasma will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-1371573