Computer Science
Scientific paper
Jan 2002
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002iaf..confe.504w&link_type=abstract
IAF abstracts, 34th COSPAR Scientific Assembly, The Second World Space Congress, held 10-19 October, 2002 in Houston, TX, USA.,
Computer Science
Scientific paper
degradation of materials from exposure to atomic oxygen in Low Earth Orbit (LEO). However the environment produced in an etcher differs greatly from environment in LEO. In this paper, the differences have been found by means of analyzing the mass loss of the HOPG graphite in different applied voltages in a plasma etcher. It is proved that the oxygen ions having more kinetic energy and oxygen atoms at excited state play important roles. The validity and the limitation of using the plasma etcher data to evaluate spacecraft materials have been presented. It appears that when plasma reacts with materials, the stronger the bond of materials is, the more important effects of oxygen ions are. The data for some materials in the plasma etcher have been compared with those in LEO. The reasons bringing about differences on some materials are analyzed. The data deviate from those in LEO for the materials with strong bond. It may be seen that plasma etchers are good to evaluate the atomic oxygen durability of protective coating. 53rd IAC, I.5 Environmental Effects and Structures Protection in I. Materials and Structures Symposium
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