Progress in GaAs JFETs for 4-kelvin IR readout applications

Details Progress in GaAs JFETs for 4-kelvin IR readout applications Progress in GaAs JFETs for 4-kelvin IR readout applications

Jun 1996

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1996spie.2745..130c&link_type=abstract

Proc. SPIE Vol. 2745, p. 130-136, Infrared Readout Electronics III, Eric R. Fossum; Ed.

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Gallium arsenide junction field-effect transistors (GaAs JFETs) can be made immune to carrier freeze-out, allowing them to operate normally from room temperature down to 4 K. This makes GaAs JFETs attractive for the readout of detector arrays that operate at deep cryogenic temperatures (< 10 K). Typical IR readout applications, however, require transistors with very low noise and extremely low input leakage current, and until recently the leakage current of cryogenic GaAs devices was too high for many IR readout applications. By using a recently developed HF-based etchant for GaAs that is highly isotropic, etched GaAs JFETs have been fabricated that have a gently tapered edge. This reduces edge fields, which consequently reduces the edge tunneling current, the dominant source of leakage current at 4 K. JFETs with gate leakage currents below 10(superscript -15) amps at 4 K have been fabricated. The fabrication technique, including the isotropic etchant, is discussed. The leakage current and noise of these JFETs are presented and compared with previous devices using a conventional etch.

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