Electron-Ion Recombination Rate Coefficients for Si I, Si II, S II, S III, C II, and C-like Ions C i, N II, O III, F IV, Ne V, Na VI, Mg VII, Al VIII, Si IX, and S XI

Details Electron-Ion Recombination Rate Coefficients for Si I, Si II, S II, S III, C II, and C-like Ions C i, N II, O III, F IV, Ne V, Na VI, Mg VII, Al VIII, Si IX, and S XI Electron-Ion Recombination Rate Coefficients for Si I, Si II, S II, S III, C II, and C-like Ions C i, N II, O III, F IV, Ne V, Na VI, Mg VII, Al VIII, Si IX, and S XI

Dec 1995

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1995apjs..101..423n&link_type=abstract

Astrophysical Journal Supplement v.101, p.423

Astronomy and Astrophysics

Astronomy

46

Atomic Data, Atomic Processes

Scientific paper

A new unified treatment for electron-ion recombination is employed to obtain recombination rate coefficients for silicon, sulfur, and carbon ions of importance in the study of the interstellar medium and H II regions in general. Improved and extended results are also presented for ions in the carbon isoelectronic sequence. Recombination rate coefficients are tabulated at a wide range of temperatures, from 101 to l09 K. These rates correspond to total electron-ion recombination incorporating both the radiative and dielectronic recombination processes calculated in an ab initio manner.

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