Processing tungsten single crystal by chemical vapor deposition

Details Processing tungsten single crystal by chemical vapor deposition Processing tungsten single crystal by chemical vapor deposition

Jan 2000

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2000aipc..504.1454x&link_type=abstract

SPACE TECHNOLOGY AND APPLICATIONS INTERNATIONAL FORUM - 2000. AIP Conference Proceedings, Volume 504, pp. 1454-1457 (2000).

Statistics

Applications

Growth From Vapor, Chemical Exchanges

Scientific paper

A tungsten single crystal layer has been fabricated on molybdenum single crystal substrate through the hydrogen (H2) reduction of the tungsten hexafluoride (WF6) in low pressure. Substrate temperature, reaction chamber pressure, and flow rate of WF6 and H2, are critical process parameters during deposition. A comprehensive analysis for the effects of these parameters on single crystal layer growth has been processed and optimized growth conditions have been achieved. The different orientation of the substrate shows the different deposition rate for tungsten. Low index plane has higher deposition rate than high index plane. The kinetics of the deposition process has also been investigated. SEM surface analysis indicates that the single crystal layer is smooth in macro-scale and rough and step-growth format in micro-scale. .

Affiliated with

Also associated with

No associations

Rating

Processing tungsten single crystal by chemical vapor deposition does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Processing tungsten single crystal by chemical vapor deposition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Processing tungsten single crystal by chemical vapor deposition will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-1252962