Solidification and crystal growth of solid solution semiconducting alloys

Details Solidification and crystal growth of solid solution semiconducting alloys Solidification and crystal growth of solid solution semiconducting alloys

Oct 1984

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1984ssi..nasa..320l&link_type=abstract

In its 2nd Symp. on Space Industrialization p 320 (SEE N85-11011 02-12)

Mathematics

Logic

Chemical Composition, Crystal Growth, Semiconductors (Materials), Solidification, Thermophysical Properties, Cadmium Alloys, Crystal Structure, Heat Transfer, Mercury Alloys, Space Commercialization, Tellurium Alloys

Scientific paper

Problems associated with the solidification and crytal growth of solid-solution semiconducting alloy crystals in a terrestrial environment are described. A detailed description is given of the results for the growth of mercury cadmium telluride (HgCdTe) alloy crystals by directional solidification, because of their considerable technological importance. A series of HgCdTe alloy crystals are grown from pseudobinary melts by a vertical Bridgman method using a wide range of growth rates and thermal conditions. Precision measurements are performed to establish compositional profiles for the crystals. The compositional variations are related to compositional variations in the melts that can result from two-dimensional diffusion or density gradient driven flow effects ahead of the growth interface. These effects are discussed in terms of the alloy phase equilibrium properties, the recent high temperature thermophysical data for the alloys and the highly unusual heat transfer characteristics of the alloy/ampule/furnace system that may readily lead to double diffusive convective flows in a gravitational environment.

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