Computer Science – Performance
Scientific paper
Jul 1998
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998spie.3379..618z&link_type=abstract
Proc. SPIE Vol. 3379, p. 618-622, Infrared Detectors and Focal Plane Arrays V, Eustace L. Dereniak; Robert E. Sampson; Eds.
Computer Science
Performance
Scientific paper
Short wavelength (SWIR) devices have been fabricated using boron implantation. The capacitance-voltage measurement has been used to examine the junction doping profiles. The junction doping profile can be n/n(superscript -)/p type or n/p type depending on the p-side doping concentration. Only the junctions made on the lightly doped substrates show the n/n(superscript -)/p type abrupt junction, with the n(superscript -) region in the low 1 X 10(superscript 14) cm(superscript -3) range. On the heavily doped substrates, we obtain the n/p type graded junctions. The peak detectivity D*(subscript (lambda) p) performance at room temperature of the large area (A(subscript j) equals 5.9 mm(superscript 2)) detector was about 2.6 X 10(superscript 11) cm-Hz(superscript 1/2)/W at the zero bias. Higher D*(subscript (lambda) p) performance about 1.4 X 10(superscript 12) cm-Hz(superscript 1/2)/W was obtained on smaller area detectors at 250 K.
Fang Jiaxiong
Wang Qin
Zhao Jun
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