Design and fabrication of 800- to 900-GHz Pb-alloy SIS mixing device incorporating an on-substrate tuning element

Details Design and fabrication of 800- to 900-GHz Pb-alloy SIS mixing device incorporating an on-substrate tuning element Design and fabrication of 800- to 900-GHz Pb-alloy SIS mixing device incorporating an on-substrate tuning element

Jul 1998

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998spie.3357...63t&link_type=abstract

Proc. SPIE Vol. 3357, p. 63-74, Advanced Technology MMW, Radio, and Terahertz Telescopes, Thomas G. Phillips; Ed.

Astronomy and Astrophysics

Astronomy

Scientific paper

The use of SIS (Superconductor-Insulator-Superconductor) devices as the mixing element, in ultra-sensitive heterodyne receivers for use in radio astronomy is well established. In attempting to exploit the last main submillimeter atmospheric window we are developing a Pb-alloy SIS mixer to work in the frequency band 800 - 900 GHz. In this paper we address some of the problems with working at frequencies above the energy gap of a superconducting alloy. We also present initial results obtained from Pb-alloy SIS junctions fabricated at the University of Kent at Canterbury (UKC).

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