CCD backside coatings optimized for 200- to 300-nm observations

Details CCD backside coatings optimized for 200- to 300-nm observations CCD backside coatings optimized for 200- to 300-nm observations

Dec 2000

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2000spie.4139....8l&link_type=abstract

Proc. SPIE Vol. 4139, p. 8-15, Instrumentation for UV/EUV Astronomy and Solar Missions, Silvano Fineschi; Clarence M. Korendyke;

Astronomy and Astrophysics

Astronomy

Scientific paper

The high QE and large variety of formats make modern back illuminated Charge-coupled devices (CCDs) nearly ideal detectors for most scientific imaging applications. In the ultraviolet (UV), however, quantum efficiency (QE) instability with temperature and with environmental conditions has limited their widespread use, especially for space applications. We have developed several techniques to achieve stable and high QE in the 200 - 300 nm wavelength range with back illuminated CCDs fabricated by various manufacturers. In this paper we report peak QE of over 90% at 240 nm (uncorrected from quantum yield). We describe a series of tests which demonstrate stability of these devices with temperature, humidity, and UV illumination. These results are all based in the chemisorption backside coating processes developed at the Steward Observatory CCD Laboratory.

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