Computer Science
Scientific paper
Sep 2002
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002sesct..17..924r&link_type=abstract
Semiconductor Science and Technology, Volume 17, Issue 9, pp. 924-930 (2002).
Computer Science
1
Scientific paper
Cadmium mercury telluride with a bandgap energy of 1.35 eV has been electrodeposited on a stainless-steel substrate. We briefly discuss the deposition and structure of the film. Gold Schottky diodes have been fabricated for the characterization of the material using various optoelectrical techniques. Among these are the bias dependence of the junction photocurrent and capacitance (in the dark and under illumination), the temperature dependence of the built-in potential and the bandgap energy, and the photo-induced current transient spectroscopy. In this paper, we reveal that the material has a resistivity in the range of 105 Ω cm and a donor concentration of 1 × 1015 cm-3. The donors are highly compensated by an acceptor-type defect level. The Fermi level is 0.52 eV below the conduction band at room temperature. It moves towards the conduction band as the temperature is lowered or as the compensation effect is reduced by illumination. In both cases, the built-in potential of the Schottky diodes increases from its room-temperature value (0.28-0.33 V) towards the barrier height potential of 0.80 V. The temperature coefficient of the bandgap energy (-0.154 meV K-1) is three times smaller than its value for the bulk material. The acceptor-type energy level responsible for the compensation effect is found to be a mercury-related defect level, which is 0.45-0.48 eV above the valence band and has a capture cross section of 8.3 × 10-19 cm2.
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