Peculiarities of electrically active states generation in HgCdTe

Details Peculiarities of electrically active states generation in HgCdTe Peculiarities of electrically active states generation in HgCdTe

Apr 1996

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1996spie.2685...41s&link_type=abstract

Proc. SPIE Vol. 2685, p. 41-45, Photodetectors: Materials and Devices, Gail J. Brown; Manijeh Razeghi; Eds.

Computer Science

Scientific paper

An investigation of native defect formation in n-HgCdTe was performed under conditions that reduce the possibility of mercury atom loss to define the contribution from complex defects to electrically active state formation. The short-term heat treatments were produced in vacuum by passing the current directly through a sample. The temperature measurement was carried out by registering the Planck radiation from the sample surface.

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