As-doping HgCdTe by MBE

Details As-doping HgCdTe by MBE As-doping HgCdTe by MBE

Jan 2005

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005spie.5640..637w&link_type=abstract

Infrared Components and Their Applications. Edited by Gong, Haimei; Cai, Yi; Chatard, Jean-Pierre. Proceedings of the SPIE, Vol

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Some results on the arsenic incorporation in MBE-grown HgCdTe are described. It was found that arsenic surface sticking coefficient during HgCdTe growth was very low, ~1x10-4 at 170°C being very sensitive to the growth temperature. The annealing experiments for activation of arsenic were performed, and the importance of the ambient mercury for the arsenic site transfer was confirmed. It was found that the arsenic dopants could be fully activated as acceptors by anneals at 285°C under the mercury-saturated pressure. The activation energy for the isolated arsenic acceptors in HgCdTe (x=0.27~0.33) was determined as to be 19.5 meV, which decreases with (Na-Nd)1/3 at a slop of 3.1x10-5 meV cm . The diffusion coefficient of arsenic in HgCdTe of 1.0+/-0.9x10-16 cm2/sec, 8+/-3x10-15 cm2/sec and 1.5+/-0.9x10-13 cm2/sec were obtained at annealing temperatures of 240°C, 380°C and 440°C under mercury saturated pressure, respectively.

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