Development and test of fully depleted pn-CCD's for X-ray detection

Details Development and test of fully depleted pn-CCD's for X-ray detection Development and test of fully depleted pn-CCD's for X-ray detection

Jan 1988

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1988spie..982..129s&link_type=abstract

IN: X-ray instrumentation in astronomy II; Proceedings of the Meeting, San Diego, CA, Aug. 15-17, 1988 (A89-40276 17-35). Bellin

Astronomy and Astrophysics

Astronomy

1

Charge Coupled Devices, Metal Oxide Semiconductors, X Ray Astronomy, Charge Transfer, Energy Distribution, Equipotentials, Silicon Radiation Detectors

Scientific paper

Fully depletable pn CCDs on high-resistivity 280-micron-thick Si (rho = 2.5 kohm cm) have been fabricated. Their operation is based on the semiconductor drift-chamber principle proposed by Gatti and Rehak (1983 and 1984). They are designed as energy- and position-sensitive radiation detectors for X-rays and (minimum-) ionizing particles. Prototypes of the detectors have been tested in quasi-static and dynamic conditions. A preliminary charge transfer inefficiency has been determined to less than 0.001 at shift frequencies varying between 500 kHz and 6 MHz.

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