Thermal annealing of narrow-gap HgTe-based alloys

Details Thermal annealing of narrow-gap HgTe-based alloys Thermal annealing of narrow-gap HgTe-based alloys

Jan 1988

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1988jcrgr..86..797k&link_type=abstract

(American Association for Crystal Growth, International Conference on II-VI Compounds, 3rd, Monterey, CA, July 12-17, 1987) Jour

Computer Science

Annealing, Electrical Properties, Mercury Cadmium Tellurides, Mercury Tellurides, Semiconductors (Materials), Zinc Tellurides, Carrier Density (Solid State), Hall Effect, Magnesium Compounds

Scientific paper

The electrical properties of several HgTe-based alloys before and after thermal annealing have been investigated, with emphasis on HgMnTe. Samples have been annealed in mercury vapor at various temperatures, in tellurium vapor, and in a dynamic vacuum. Results indicate that a similar conductivity mechanism, a mercury vacancy acting as an acceptor, is at work in these alloys and those of HgCdTe. Hall measurements and thermal probe mapping have been used to study the electrical properties of the Hg-Te-based alloys.

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