Physics
Scientist
Department of Electronic Engineering and Computer Science, Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan
Department of Electronics, Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan
Calculation of band bending in ferroelectric semiconductor
The influence of excited states of deep dopants on majority-carrier concentration in a wide-bandgap semiconductor
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